Design and simulation of low-threshold antimonide intersubband lasers
Identifieur interne : 001839 ( France/Analysis ); précédent : 001838; suivant : 001840Design and simulation of low-threshold antimonide intersubband lasers
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Abstract
Optically and electrically pumped infrared lasers based on intersubband transitions in InAs/GaSb/AlAsSb quantum wells are modeled in detail. The large conduction-band offset of the AlAsSb barriers with respect to the InAs wells allows the lasing wavelength to be shortened to at least 1.9 μm. Furthermore, the small InAs electron mass results in longer phonon-limited lifetimes in the upper lasing subband as well as larger dipole matrix elements. This leads to the prediction of lower threshold currents, and hence, higher cw operating temperatures than for quantum cascade lasers based on the InGaAs/InAlAs/InP system. © 1998 American Institute of Physics.
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Julien</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Institut dElectronique Fondamentale, URA CNRS 22, Universite Paris-Sud, 91405 Orsay, France</s1> <sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Institut dElectronique Fondamentale, URA CNRS 22, Universite Paris-Sud, 91405 Orsay</wicri:regionArea> <placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Orsay</settlement></placeName><orgName type="university">Université Paris-Sud</orgName></affiliation></author><author><name sortKey="Ram Mohan, L R" uniqKey="Ram Mohan L">L. R. Ram Mohan</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Worcester Polytechnic Institute, Worcester, Massachusetts 01609</s1><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Massachusetts</region></placeName><wicri:cityArea>Worcester Polytechnic Institute, Worcester</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">98-0336967</idno><date when="1998-08-10">1998-08-10</date><idno type="stanalyst">PASCAL 98-0336967 AIP</idno><idno type="RBID">Pascal:98-0336967</idno><idno type="wicri:Area/Main/Corpus">016B78</idno><idno type="wicri:Area/Main/Repository">015C89</idno><idno type="wicri:Area/France/Extraction">001839</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Arsenic compounds</term><term>Computerized simulation</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Quantum well lasers</term><term>Theoretical study</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4255P</term><term>4260B</term><term>8530V</term><term>Etude théorique</term><term>Simulation ordinateur</term><term>Indium composé</term><term>Gallium composé</term><term>Aluminium composé</term><term>Arsenic composé</term><term>Semiconducteur III-V</term><term>Laser puits quantique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Optically and electrically pumped infrared lasers based on intersubband transitions in InAs/GaSb/AlAsSb quantum wells are modeled in detail. The large conduction-band offset of the AlAsSb barriers with respect to the InAs wells allows the lasing wavelength to be shortened to at least 1.9 μm. Furthermore, the small InAs electron mass results in longer phonon-limited lifetimes in the upper lasing subband as well as larger dipole matrix elements. This leads to the prediction of lower threshold currents, and hence, higher cw operating temperatures than for quantum cascade lasers based on the InGaAs/InAlAs/InP system. © 1998 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>73</s2></fA05><fA06><s2>6</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Design and simulation of low-threshold antimonide intersubband lasers</s1></fA08><fA11 i1="01" i2="1"><s1>VURGAFTMAN (I.)</s1></fA11><fA11 i1="02" i2="1"><s1>MEYER (J. R.)</s1></fA11><fA11 i1="03" i2="1"><s1>JULIEN (F. 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